AOD418 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOD418 ·FEATURES ·Drain Current –ID= 36A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.5mΩ(Max) ·100% avalanche tes

AOD418/AOI418 30V N-Channel MOSFET General Description The AOD418/AOI418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resist

AOD4180 80V N-Channel MOSFET TM SDMOS General Description The AOD4180 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding eff

isc N-Channel MOSFET Transistor AOD4180 FEATURES ·Drain Current –ID= 54A@ TC=25℃ ·Drain Source Voltage- : VDSS=80V(Min) ·Static Drain-Source On-Resistance : RDS(on) =14mΩ(Max) ·100% avalanche tested

AOD4182 80V N-Channel MOSFET TM SDMOS General Description The AOD4182 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding eff

isc N-Channel MOSFET Transistor AOD4182 FEATURES ·Drain Current –ID= 53A@ TC=25℃ ·Drain Source Voltage- : VDSS=80V(Min) ·Static Drain-Source On-Resistance : RDS(on) =15.5mΩ(Max) ·100% avalanche teste

isc N-Channel MOSFET Transistor AOD4184 ·FEATURES ·Drain Current –ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8mΩ(Max) ·100% avalanche test