AOD417 डाटा शीट PDF( Datasheet )

AOD417 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellen

isc P-Channel MOSFET Transistor AOD417 FEATURES ·Drain Current –ID=-25A@ TC=25℃ ·Drain Source Voltage- : VDSS=-30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 34mΩ(Max) ·100% avalanche tested