AOD414 डाटा शीट PDF( Datasheet )

AOD414 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD414 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. Thi

AOD4140 TM N-Channel SDMOS POWER Transistor General Description The AOD4140 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency

AOD4142 N-Channel SDMOSTM POWER Transistor General Description The AOD4142 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency

AOD4144 N-Channel SDMOSTM Power Transistor General Description The AOD4144 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency

AOD4146/AOI4146 30V N-Channel MOSFET SDMOS TM General Description The AOD4146/AOI4146 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding

isc N-Channel MOSFET Transistor AOD4146 FEATURES ·Drain Current –ID= 55A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =5.6mΩ(Max) ·100% avalanche tested