AOD412 डाटा शीट PDF( Datasheet )

www.DataSheet4U.com AOD412 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD412 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance

AOD4120 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4120 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable f

isc N-Channel MOSFET Transistor AOD4120 FEATURES ·Drain Current –ID= 25A@ TC=25℃ ·Drain Source Voltage- : VDSS=20V(Min) ·Static Drain-Source On-Resistance : RDS(on) =18mΩ(Max) ·100% avalanche tested

AOD4124 100V N-Channel MOSFET TM SDMOS General Description The AOD4124 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding ef

isc N-Channel MOSFET Transistor INCHANGE Semiconductor AOD4124 ·FEATURES ·With TO-252(DPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust

AOD4126/AOI4126 100V N-Channel MOSFET SDMOS TM General Description The AOD4126&AOI4126 are fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstandin

isc N-Channel MOSFET Transistor AOD4126 FEATURES ·Drain Current –ID= 43A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =24mΩ(Max) ·100% avalanche tested