AOD410 डाटा शीट PDF( Datasheet )

www.DataSheet4U.com Rev3: Nov 2004 AOD410, AOD410L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Description The AOD410 uses advanced trench technology to provide excellent RDS(

AOD4100 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4100 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. Th

AOD4102/AOI4102 30V N-Channel MOSFET General Description The AOD4102/AOI4102 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM

isc N-Channel MOSFET Transistor AOD4102 FEATURES ·Drain Current –ID= 19A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =37mΩ(Max) ·100% avalanche tested

AOD4104 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4104 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. Th

AOD4106 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4106 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a low

Rev3: Nov 2004 AOD410, AOD410L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Description The AOD410 uses advanced trench technology to provide excellent RDS(ON) and low gate char