AOD409 डाटा शीट PDF( Datasheet )

www.DataSheet4U.com AOD409 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistanc

isc P-Channel MOSFET Transistor ·FEATURES ·With TO-252( DPAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-L

isc P-Channel MOSFET Transistor AOD409G ·FEATURES ·Drain Current –ID= -28A@ TC=25℃ ·Drain Source Voltage- : VDSS= -60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 40mΩ(Max) ·100% avalanche t

AOD409G 60V P-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Logic Level Driving • RoHS and Halogen-Free Compliant Applications • Industrial and Motor Drive appli