AOD3N60 डाटा शीट PDF( Datasheet )

AOD3N60/AOU3N60 600V,2.5A N-Channel MOSFET General Description The AOD3N60 & AOU3N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance an

isc N-Channel MOSFET Transistor AOD3N60 FEATURES ·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =3.5Ω(Max) ·100% avalanche teste