AOD2N60 डाटा शीट PDF( Datasheet )

AOD2N60/AOU2N60 600V, 2A N-Channel MOSFET General Description Product Summary The AOD2N60 & AOU2N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels

isc N-Channel MOSFET Transistor AOD2N60 FEATURES ·Drain Current –ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =4.4Ω(Max) ·100% avalanche tested

AOD2N60A/AOI2N60A/AOU2N60A 600V,2A N-Channel MOSFET General Description • Advanced High Voltage MOSFET technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free C

isc N-Channel MOSFET Transistor AOD2N60A FEATURES ·Drain Current –ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =4.7Ω(Max) ·100% avalanche tested