AOD2910 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOD2910 ·FEATURES ·Drain Current –ID= 31A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 24mΩ(Max) ·100% avalanche te

AOD2910 100V N-Channel MOSFET General Description The AOD2910 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and sw

AOD2910E 100V N-Channel MOSFET General Description • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • ESD protected • Optimized for fast-switching applications Applications • Syn

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-252( DPAK ) packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for rob