AOD2610 डाटा शीट PDF( Datasheet )

AOD2610 60V N-Channel MOSFET General Description The AOD2610 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimiz

Isc N-Channel MOSFET Transistor AOD2610 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for r

isc N-Channel MOSFET Transistor AOD2610E FEATURES ·Drain Current –ID= 46A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9.5mΩ(Max) ·100% avalanche test

AOD2610E/AOI2610E/AOY2610E 60V N-Channel AlphaSGT TM General Description • Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Low Eoss • ESD protected • RoHS and Halogen-Free Comp