AOD210 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOD210 FEATURES ·Drain Current –ID= 70A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3mΩ(Max) ·100% avalanche tested

AOD210 30V N-Channel MOSFET General Description The AOD210 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimize

AOD210 30V N-Channel MOSFET General Description The AOD210 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized

AOD210V60E 600V, a MOSE TM N-Channel Power Transistor General Description • Excellent RDS(ON)*A • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast r