AOD208 डाटा शीट PDF( Datasheet )

AOD208 30V N-Channel MOSFET General Description The AOD208 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimize

AOD208 30V N-Channel MOSFET General Description The AOD208 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized

isc N-Channel MOSFET Transistor AOD208 FEATURES ·Drain Current –ID=54A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.4mΩ(Max) ·100% avalanche tested