डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
AOD200 | N-Channel MOSFET AOD200
30V N-Channel MOSFET
General Description
The AOD200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized |
Alpha & Omega Semiconductors |
|
AOD200 | N-Channel MOSFET AOD200
30V N-Channel MOSFET
General Description
The AOD200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized |
Freescale |
|
AOD200 | N-Channel MOSFET isc N-Channel MOSFET Transistor
AOD200
FEATURES ·Drain Current –ID=36A@ TC=25℃ ·Drain Source Voltage-
: VDSS=30V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 7.8mΩ(Max) ·100% avalanche tested |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |