AOB286L डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOB286L ·FEATURES ·Drain Current –ID= 70A@ TC=25℃ ·Drain Source Voltage- : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.7mΩ(Max) ·100% avalanche te

AOT286L/AOB286L 80V N-Channel MOSFET General Description Product Summary The AOT286L/AOB286L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching pe