AOB210L डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOB210L FEATURES ·Drain Current –ID= 105A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.6mΩ(Max) ·100% avalanche tes

AOT210L/AOB210L 30V N-Channel MOSFET General Description The AOT210L/AOB210L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power l

AOT210L/AOB210L 30V N-Channel MOSFET General Description The AOT210L/AOB210L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power l