AO4406 डाटा शीट PDF( Datasheet )

March 2002 AO4406 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4406 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltage

Freescale AO4406/MC4406 N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipatio

AO4406 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4406/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low a

AO4406A 30V N-Channel MOSFET General Description The AO4406A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general

AO4406A 30V N-Channel MOSFET General Description The AO4406A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general

AO4406AL N-Channel Enhancement Mode Field Effect Transistor General Description The AO4406AL uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high s