AO3407 डाटा शीट PDF( Datasheet )

AO3407 30V P-Channel MOSFET General Description The AO3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applicat

AO3407 30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@ 4.1A < 64.5m Ω RDS(ON), [email protected], [email protected] < 87m Ω Features Advanced trench process technology High Density Cell Design For

SMD Type P-Channel Enhancement MOSFET MOSFET IC AO3407 (KO3407) SOT-23 Unit: mm +0.1 2.4 -0.1 ID = -4.1 A RDS(ON) RDS(ON) 52m 87m (VGS = -10V) (VGS = -4.5V) D +0.1 1.3 -0.1 VDS (V) = -30V 1 +0.1 0.95 -0

Plastic-Encapsulate Mosfets FEATURES The AO3407 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. G AO3

AO3407 Rev.C Nov.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 P 道 MOS 场效应管。P- CHANNEL MOSFET in a SOT-23 Plastic Package. 特征 / Features VDS (V) = -30V ID = -4.1 A RDS(ON) < 52m

AO3407A 30V P-Channel MOSFET General Description The AO3407A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applic