8N80 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor INCHANGE Semiconductor 8N80 DESCRIPTION ·Static Drain-Source On-Resistance : RDS(on) = 1.25Ω(Max) @ ID= 4A ·Drain Current –ID=8.0A@ TC=25℃ ·Fast Switching Speed ·100%

UNISONIC TECHNOLOGIES CO., LTD 8N80 Power MOSFET 8A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N80 is a N-channel mode power MOSFET, it uses UTC’s advanced technology to provide costumers planar

UNISONIC TECHNOLOGIES CO., LTD 8N80-C 8A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N80-C provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for

FQP8N80C / FQPF8N80C / FQPF8N80CYDTU — N-Channel QFET® MOSFET December 2013 FQP8N80C / FQPF8N80C / FQPF8N80CYDTU N-Channel QFET® MOSFET 800 V, 8.0 A, 1.55 Ω Description Features This N-Channel enhancem

STF8N80K5, STFI8N80K5 N-channel 800 V, 0.8 Ω typ., 6 A MDmesh™ K5 Power MOSFET in TO-220FP and I2PAKFP packages Datasheet − production data 3 2 1 TO-220FP 1 2 3 I2PAKFP (TO-281) Features Order codes