4N65 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and r

UNISONIC TECHNOLOGIES CO., LTD 4N65 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate cha

R SEMICONDUCTOR 4N65 650V N-Channel Power MOSFET FEATURES ● RDS(ON)<2.4Ω @ VGS=10V ● Fast switching capability ● Lead free in compliance with EU RoHS directive. ● Green molding compound MECHANICAL DA

4N65(F,B,H,G,D) 4A mps,650 Volts N-CHANNEL MOSFET FEATURE  4A,650V,RDS(ON)=2.2Ω@VGS=10V/2A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-2

UNISONIC TECHNOLOGIES CO., LTD 4N65-C 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65-C is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate

UNISONIC TECHNOLOGIES CO., LTD 4N65-E 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65-E is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate

UNISONIC TECHNOLOGIES CO., LTD 4N65-ML 4.0A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65-ML is a high voltage power MOSFET combines advanced planar MOSFET designed to have better characteristics, s