डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
4435 | P-Channel MOSFET FDS4435
October 2001
FDS4435
30V P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been opt |
Fairchild Semiconductor |
|
4435 | P-Channel MOSFET P-channel Enhancement Mode MOSFET
The uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use a |
CXW |
|
4435 | P-Channel MOSFET Shenzhen Tuofeng Semiconductor Technology Co., Ltd
P-Channel 30-V (D-S) MOSFET
4435
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.020 @ VGS = −10 V −30
0.030 @ VGS = −4.5 V
ID (A)
−8.0 −5.0
FEATURES D |
Tuofeng Semiconductor |
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4435BZ | FDS4435BZ FDS4435BZ P-Channel PowerTrench® MOSFET
www.DataSheet4U.com
June 2007
FDS4435BZ
P-Channel PowerTrench® MOSFET
-30V, -8.8A, 20mΩ
Features
Max rDS(on) = 20mΩ at VGS = -10V, ID = -8.8A Max rDS(on) = |
Fairchild Semiconductor |
|
4435GM-HF | AP4435GM-HF AP4435GM-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant
SO-8
S S D D D D
P-CHANNEL ENHANCEMENT |
Advanced Power Electronics |
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