40N120 डाटा शीट PDF( Datasheet )

IGBT with Reverse Blocking capability IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE(sat) = 2.3 V typ. C TO-247 AD G G C E C (TAB) E G = Gate, C = Collector, E = Emitter, TAB = Collector IGBT Symbol V

NGTB40N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching application

NGTB40N120FL2WAG IGBT - Field Stop II / 4 Lead This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demand

NGTB40N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching application