डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
3DD8D | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 110V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2V(Max) @IC= 5A ·Minimum Lot-to-Lot variations for |
Inchange Semiconductor |
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3DD8D | Silicon NPN Power Transistor | Inchange Semiconductor |
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3DD880X | NPN Transistor | INCHANGE |
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3DD8E | Silicon NPN Power Transistor | Inchange Semiconductor |
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3DD8C | Silicon NPN Power Transistor | Inchange Semiconductor |
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3DD880 | NPN Transistor | INCHANGE |
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3DD8F | Silicon NPN Power Transistor | Inchange Semiconductor |
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3DD8B | Silicon NPN Power Transistor | Inchange Semiconductor |
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3DD8A | Silicon NPN Power Transistor | Inchange Semiconductor |
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