डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
3DD301D | Silicon Power Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 3A ·Minimum Lot-to-Lot variations f |
Inchange |
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3DD301C | Silicon Power Transistor | Inchange |
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3DD3010A1 | Silicon NPN Transistor | Huajing Microelectronics |
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3DD3015A1 | Silicon NPN Transistor | Huajing Microelectronics |
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3DD3015A1-H | Silicon NPN bipolar transistor | Huajing Microelectronics |
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3DD301D | Silicon Power Transistor | Inchange |
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3DD301B | Silicon Power Transistor | Inchange |
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3DD3015A3 | Silicon NPN Transistor | Huajing Microelectronics |
www.DataSheet.in | 2017 | संपर्क |