डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
3DD207 | Silicon NPN Power Transistors isc Silicon NPN Power Transistor
INCHANGE Semiconductor
3DD207
DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot vari |
Inchange Semiconductor |
|
3DD2073 | NPN Transistor 3DD2073 型 NPN 硅低频大功率晶体管
参数符号
测试条件
PCM ICM 极 限 Tjm 值 Tstg
Rth
V(BR)CBO V(BR)CEO V(BR)EBO 直 流 ICBO 参 IEBO 数 VBEsat
VCEsat
hFE
Tc=25℃
VCE=10V IC=0.8A ICB=1mA |
ETC |
|
3DD207I | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD207i
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min.) ·Collector-Emitter Saturation Voltage-
: VC |
Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |