डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
30J324 | Transistor Silicon N-Channel IGBT GT30J324
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J324
High Power Switching Applications Fast Switching Applications
Unit: mm
• Fourth-generation IGBT
• Enhancement mode type
|
Toshiba Semiconductor |
|
30J324 | Transistor Silicon N-Channel IGBT | Toshiba Semiconductor |
|
30J322 | Silicon N-Channel IGBT | Toshiba |
www.DataSheet.in | 2017 | संपर्क |