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VS-ST650C24L1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Phase Control Thyristors - Vishay

भाग संख्या VS-ST650C24L1
समारोह Phase Control Thyristors
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=VS-ST650C24L1?> डेटा पत्रक पीडीएफ

VS-ST650C24L1 pdf
www.vishay.com
VS-ST650C..L Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
at heatsink temperature
IT(AV)
Maximum RMS on-state current
IT(RMS)
Maximum peak, one-cycle
non-repetitive surge current
ITSM
Maximum I2t for fusing
Maximum I2t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope
resistance
High level value of on-state
slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
I2t
I2t
VT(TO)1
VT(TO)2
rt1
rt2
VTM
IH
IL
TEST CONDITIONS
VALUES
180° conduction, half sine wave
Double side (single side) cooled
790 (324)
55 (85)
DC at 25 °C heatsink temperature double side cooled 1857
t = 10 ms
t = 8.3 ms
No voltage
reapplied
10 100
10 700
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
8600
9150
510
475
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
370
347
t = 0.1 to 10 ms, no voltage reapplied
5100
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
(I > π x IT(AV)), TJ = TJ maximum
1.04
1.13
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
0.61
(I > π x IT(AV)), TJ = TJ maximum
Ipk = 1700 A, TJ = TJ maximum, tp = 10 ms sine pulse
TJ = 25 °C, anode supply 12 V resistive load
0.35
2.07
600
1000
UNITS
A
°C
A
kA2s
kA2s
V
mΩ
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time
Maximum turn-off time
SYMBOL
dI/dt
td
tq
TEST CONDITIONS
Gate drive 20 V, 20 Ω, tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C
ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/μs
VR = 50, dV/dt = 20 V/μs, Gate 0 V 100 Ω, tp = 500 μs
VALUES
1000
1.0
200
UNITS
A/μs
μs
BLOCKING
PARAMETER
Maximum critical rate of rise of off-state voltage
Maximum peak reverse and off-state leakage
current
SYMBOL
dV/dt
IRRM,
IDRM
TEST CONDITIONS
TJ = TJ maximum linear to 80 % rated VDRM
TJ = TJ maximum, rated VDRM/VRRM applied
VALUES
500
80
UNITS
V/μs
mA
Revision: 15-Apr-14
2 Document Number: 93738
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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