DataSheet.in

VS-25RIA10 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Medium Power Phase Control Thyristors - Vishay

भाग संख्या VS-25RIA10
समारोह Medium Power Phase Control Thyristors
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=VS-25RIA10?> डेटा पत्रक पीडीएफ

VS-25RIA10 pdf
www.vishay.com
VS-25RIA Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
at case temperature
IT(AV)
Maximum RMS on-state current
IT(RMS)
Maximum peak, one-cycle
non-repetitive surge current
ITSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of
on-state slope resistance
High level value of
on-state slope resistance
Maximum on-state voltage
Maximum holding current
Latching current
I2t
VT(TO)1
VT(TO)2
rt1
rt2
VTM
IH
IL
TEST CONDITIONS
180° sinusoidal conduction
t = 10 ms
t = 8.3 ms
No voltage
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied,
TJ = TJ maximum
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
(I > x IT(AV)), TJ = TJ maximum
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
(I > x IT(AV)), TJ = TJ maximum
Ipk = 79 A, TJ = 25 °C
TJ = 25 °C, anode supply 6 V, resistive load
VALUES
25
85
40
420
440
350
370
867
790
615
560
8670
0.99
1.40
10.1
5.7
1.70
130
200
UNITS
A
°C
A
A
A2s
A2s
V
m
V
mA
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum rate of rise
of turned-on current
Typical turn-on time
VDRM 600 V
VDRM 800 V
VDRM 1000 V
VDRM 1600 V
Typical reverse recovery time
dI/dt
tgt
trr
Typical turn-off time
tq
TJ = TJ maximum, VDM = Rated VDRM
Gate pulse = 20 V, 15 , tp = 6 μs, tr = 0.1 μs maximum
ITM = (2 x rated dI/dt) A
TJ = 25 °C, at rated VDRM/VRRM, TJ = 125 °C
TJ = TJ maximum, ITM = IT(AV), tp > 200 μs,
dI/dt = - 10 A/μs
TJ = TJ maximum, ITM = IT(AV), tp > 200 μs, VR = 100 V,
dI/dt = - 10 A/μs, dV/dt = 20 V/μs linear to 67 % VDRM,
gate bias 0 V to 100 W
Note
• tq = 10 μs up to 600 V, tq = 30 μs up to 1600 V available on special request
VALUES
200
180
160
150
0.9
4
110
UNITS
A/μs
μs
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum critical rate of rise
of off-state voltage
dV/dt
TJ = TJ maximum linear to 100 % rated VDRM
TJ = TJ maximum linear to 67 % rated VDRM
Note
(1) Available with: dV/dt = 1000 V/μs, to complete code add S90 i.e. 25RIA120S90
VALUES
100
300 (1)
UNITS
V/μs
Revision: 11-Mar-14
2 Document Number: 93701
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

विन्यास 8 पेज
डाउनलोड[ VS-25RIA10 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
VS-25RIA10Medium Power Phase Control ThyristorsVishay
Vishay
VS-25RIA100Medium Power Phase Control ThyristorsVishay
Vishay


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English