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VB60170G डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Vishay

भाग संख्या VB60170G
समारोह Dual High-Voltage Trench MOS Barrier Schottky Rectifier
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=VB60170G?> डेटा पत्रक पीडीएफ

VB60170G pdf
www.vishay.com
VB60170G
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
Reverse current per diode
IF = 5 A
IF = 15 A
IF = 30 A
IF = 5 A
IF = 15 A
IF = 30 A
VR = 136 V
VR = 170 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 20 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
TYP.
0.65
0.78
0.87
0.50
0.62
0.72
1.5
2.5
-
5
MAX.
-
-
1.02
-
-
0.80
-
-
450
50
UNIT
V
μA
mA
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
per diode
per device
RJC
VB60170G
1.0
0.7
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-263AB
VB60170G-E3/4W
1.38
TO-263AB
VB60170G-E3/8W
1.38
PACKAGE CODE
4W
8W
BASE QUANTITY
50/tube
800/reel
DELIVERY MODE
Tube
Tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
40
35
30
25
20
15
10
5
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
30.0
D = 0.5 D = 0.8
25.0 D = 0.3
D = 0.2
20.0 D = 0.1
D = 1.0
15.0
10.0
T
5.0
0.0
0
D = tp/T
tp
5 10 15 20 25 30
Average Forward Current (A)
35
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 11-Jul-12
2 Document Number: 89950
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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