DataSheet.in

VB40100C-E3 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual High Voltage Trench MOS Barrier Schottky Rectifier - Vishay

भाग संख्या VB40100C-E3
समारोह Dual High Voltage Trench MOS Barrier Schottky Rectifier
मैन्युफैक्चरर्स Vishay 
लोगो Vishay लोगो 
पूर्व दर्शन
1 Page
		
<?=VB40100C-E3?> डेटा पत्रक पीडीएफ

VB40100C-E3 pdf
V40100C-E3, VF40100C-E3, VB40100C-E3, VI40100C-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Breakdown voltage (2)
Instantaneous forward voltage per diode (1)
IR = 1.0 mA
IR = 10 mA
IF = 5 A
IF = 10 A
IF = 20 A
IF = 5 A
IF = 10 A
IF = 20 A
Reverse current at rated VR per diode (2)
VR = 70 V
VR = 100 V
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
TA = 25 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VBR
VF
IR
TYP.
100
(minimum)
105
(minimum)
0.47
0.54
0.67
0.38
0.45
0.61
9
10
-
21
MAX.
-
-
-
-
0.73
-
-
0.67
-
-
1000
45
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V40100C
VF40100C
Typical thermal resistance per diode
RJC
2.0
4.0
VB40100C
2.0
VI40100C
2.0
UNIT
V
V
μA
mA
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
V40100C-E3/4W
1.85
ITO-220AB
VF40100C-E3/4W
1.75
TO-263AB
VB40100C-E3/4W
1.39
TO-263AB
VB40100C-E3/8W
1.39
TO-262AA
VI40100C-E3/4W
1.46
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/tube
50/tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
50
VI40100C
40 VB40100C
V40100C
30 VF40100C
20
10
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
18
16
D = 0.8
14 D = 0.5
D = 0.3
12
10 D = 0.2
D = 1.0
8 D = 0.1
6
T
4
2
D = tp/T
tp
0
0 5 10 15 20 25
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 19-Jun-2018
2 Document Number: 89042
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

विन्यास 6 पेज
डाउनलोड[ VB40100C-E3 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
VB40100C-E3Dual High Voltage Trench MOS Barrier Schottky RectifierVishay
Vishay


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English