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IRF60R217 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IR MOSFET - Infineon

भाग संख्या IRF60R217
समारोह IR MOSFET
मैन्युफैक्चरर्स Infineon 
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<?=IRF60R217?> डेटा पत्रक पीडीएफ

IRF60R217 pdf
  IRF60R217
Absolute Maximum Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics 
EAS (Thermally limited) Single Pulse Avalanche Energy 
EAS (Thermally limited) Single Pulse Avalanche Energy 
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Thermal Resistance  
Symbol
Parameter
RJC Junction-to-Case 
RJA Junction-to-Ambient (PCB Mount)
RJA Junction-to-Ambient
Max.
58
41
217
83
0.56
± 20
-55 to + 175  
300
85
124
See Fig 15, 16, 23a, 23b
Typ.
–––
–––
–––
Max.
1.8
50
110
Units
A 
W
W/°C
V
°C  
mJ
A
mJ
Units
°C/W  
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG Gate Resistance
Min. Typ. Max.
60 ––– –––
––– 0.047 –––
––– 8.0 9.9
––– 10 –––
2.1 ––– 3.7
––– ––– 1.0
––– ––– 150
––– ––– 100
––– ––– -100
––– 2.0 –––
Units
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
m
VGS = 10V, ID = 35A
VGS = 6.0V, ID = 18A
V VDS = VGS, ID = 50µA
µA
VDS = 60V, VGS = 0V
VDS = 60V,VGS = 0V,TJ =125°C
nA
VGS = 20V
VGS = -20V

Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.14mH, RG = 50, IAS = 35A, VGS =10V.
 ISD 35A, di/dt 862A/µs, VDD V(BR)DSS, TJ 175°C.
 Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
Ris measured at TJ approximately 90°C.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994.please refer to application note to AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 16A, VGS =10V.
2 2016-01-05

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