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IRF60B217 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IR MOSFET - Infineon

भाग संख्या IRF60B217
समारोह IR MOSFET
मैन्युफैक्चरर्स Infineon 
लोगो Infineon लोगो 
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<?=IRF60B217?> डेटा पत्रक पीडीएफ

IRF60B217 pdf
  IRF60B217
Absolute Maximum Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
Max.
60
42
225
83
0.56
VGS Gate-to-Source Voltage
± 20
Operating Junction and
TJ Storage Temperature Range
-55 to + 175  
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)  
Avalanche Characteristics 
EAS (Thermally limited) Single Pulse Avalanche Energy 
EAS (Thermally limited)
IAR
EAR
Single Pulse Avalanche Energy 
Avalanche Current
Repetitive Avalanche Energy
Thermal Resistance  
Symbol
RJC
Parameter
Junction-to-Case 
RCS
RJA
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
85
124
See Fig 15, 16, 23a, 23b
Typ.
–––
0.50
–––
Max.
1.8
–––
62
Units
A 
W
W/°C
V
°C  
mJ
A
mJ
Units
°C/W  
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG Gate Resistance
Min. Typ. Max.
60 ––– –––
––– 0.047 –––
––– 7.3 9.0
––– 9.0 –––
2.1 ––– 3.7
––– ––– 1.0
––– ––– 150
––– ––– 100
––– ––– -100
––– 2.0 –––
Units
V
V/°C
m
V
µA
nA

Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 36A
VGS = 6.0V, ID = 18A
VDS = VGS, ID = 50µA
VDS =40 V, VGS = 0V
VDS =40V,VGS = 0V,TJ =125°C
VGS = 20V
VGS = -20V
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.131mH, RG = 50, IAS = 36A, VGS =10V.
ISD 36A, di/dt 630A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
Ris measured at TJ approximately 90°C.
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 16A, VGS =10V.
2 2016– 01-05

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