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DMP2033UCB9 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMP2033UCB9
समारोह P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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<?=DMP2033UCB9?> डेटा पत्रक पीडीएफ

DMP2033UCB9 pdf
DMP2033UCB9
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = -4.5V
Continuous Drain Current (Note 6) VGS = -4.5V
Pulsed Drain Current
Steady
State
Steady
State
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
ID
IDM
Value
-20
-6
-4.2A
-3.3A
-5.8A
-4.5A
-30
Units
V
V
A
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
PD
PD
RθJA
RθJA
TJ, TSTG
Value
1.0
1.8
126.8
69
-55 to +150
Units
W
W
°C/W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
Reverse Recovery Charge
Reverse Recovery Time
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Series Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
@Tc = 25°C
BVDSS
BVGSS
IDSS
IGSS
VGS(th)
RDS (ON)
|Yfs|
VSD
Qrr
trr
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Min
-20
-6.1
-
-
-0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-0.6
28
35
45
10.8
-0.7
15
25
382
204
86
26.1
5.4
0.7
1.5
8.5
11.8
47
56
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Max
-
-
-1
-100
-1.1
33
45
65
-
-1
-
-
500
270
115
35
7.0
-
-
-
-
-
-
Unit Test Condition
V VGS = 0V, ID = -250μA
V IGS = -250μA, VDS = 0V
μA VDS = -16V, VGS = 0V
nA VGS = -6V, VDS = 0V
V VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -2A
mΩ VGS = -2.5V, ID = -2A
VGS = -1.8V, ID = -2A
S VDS = -10V, ID = -2A
V VGS = 0V, IS = -2A
nC Vdd = -9.5V, IF = -2A,
ns di/dt = 200A/μs
pF
pF VDS = -10V, VGS = 0V,
f = 1.0MHz
pF
Ω VDS = 0V, VGS = 0V, f = 1.0MHz
nC
nC VGS = -4.5V, VDS = -10V,
nC ID = -2A
ns
ns VDD = -10V, VGS = -4.5V,
ns IDS = -2A, RG = 2,
ns
DMP2033UCB9
Document number: DS35904 Rev. 3 - 2
2 of 6
www.diodes.com
June 2012
© Diodes Incorporated

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