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DMP2006UFG डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMP2006UFG
समारोह P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
पूर्व दर्शन
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<?=DMP2006UFG?> डेटा पत्रक पीडीएफ

DMP2006UFG pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = -4.5V
Steady
State
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 5)
Avalanche Current (Note 7) L=0.1mH
Avalanche Energy (Note 7) L=0.1mH
TA = +25°C
TA = +70°C
TC = +25°C
Symbol
VDSS
VGSS
ID
IDM
IS
IAS
EAS
DMP2006UFG
Value
-20
±10
-17.5
-14.0
-40
-80
-2.2
-23
28
Units
V
V
A
A
A
A
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
TA = +25°C
TC = +25°C
(Note 5)
(Note 6)
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
2.3
41
54
136
3.0
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol Min Typ Max Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time (Note 9)
Reverse Recovery Charge (Note 9)
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
VSD
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
-20
-0.4
4.2
5.4
8
12
-0.7
5404
728
612
3.8
64
140
8.5
17
9.1
19
146
104
61
44
-1
±100
-1.0
5.5
7.5
12
17
-1.2
7500
1000
900
8
100
200
15
30
20
35
220
150
100
70
V VGS = 0V, ID = -250µA
µA VDS = -16V, VGS = 0V
nA VGS = 8V, VDS = 0V
V VDS = VGS, ID = -250µA
VGS = -4.5V, ID = -15A
mVGS = -2.5V, ID = -10A
VGS = -1.8V, ID = -1A
VGS = -1.5V, ID = -1A
V VGS = 0V, IS = -10A
pF
VDS = -10V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
nCVDD = -10V, ID = -20A
ns
VGS = -4.5V, VDD = -10V,
RG = 1, RG = 1ID = -10A
ns IF = -10A, di/dt = 100A/µs
nC IF = -10A, di/dt = 100A/µs
Notes:
5. RθJA is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. RθJC is guaranteed by design
while RθJA is determined by the user’s board design.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7 .UIS in production with L =0.1mH, TJ = +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated
DMP2006UFG
Document number: DS36802 Rev. 4 - 2
2 of 6
www.diodes.com
April 2015
© Diodes Incorporated

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