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IRFI4410ZPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRFI4410ZPBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRFI4410ZPBF?> डेटा पत्रक पीडीएफ

IRFI4410ZPBF pdf
IRFI4410ZPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Param eter
Mi n.
V( BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/ TJ Breakdown Voltage Temp. Coefficient
RDS( on)
Static Drain-to-Source On-Resistance
VG S(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
100
–––
–––
2.0
–––
–––
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
RG(int)
Internal Gate Resistance
–––
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Param eter
Mi n.
gfs Forward Transconductance
80
Qg
Qgs
Qgd
td( on)
tr
td( off)
tf
Cis s
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Ty p.
–––
95
7.9
–––
–––
–––
–––
–––
0.9
Ty p.
–––
81
18
23
15
27
43
30
4910
330
150
420
680
Max. Units
Conditions
––– V VGS = 0V, ID = 250μA
e––– mV/°C Reference to 25°C, ID = 5mA
e9.3 m VGS = 10V, ID = 26A
4.0 V VDS = VGS, ID = 150μA
20 μA VDS = 100V, VGS = 0V
250 VDS = 100V, VGS = 0V, TJ = 125°C
100 nA VGS = 20V
- 1 00
VGS = -20V
–––
Max. Units
Conditions
––– S VDS = 50V, ID = 26A
110 nC ID = 26A
e––– VDS = 50V
––– VGS = 10V
––– ns VDD = 65V
––– ID = 26A
e––– RG = 2.7
––– VGS = 10V
––– pF VGS = 0V
––– VDS = 50V
––– ƒ = 1.0MHz
h––– VGS = 0V, VDS = 0V to 80V , See Fig.11
––– VGS = 0V, VDS = 0V to 80V
Diode Characteristics
Symbol
P ara meter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 43 A MOSFET symbol
showing the
––– ––– 170 A integral reverse
––– ––– 1.3
ep-n junction diode.
V TJ = 25°C, IS = 26A, VGS = 0V
G
––– 47 71 ns TJ = 25°C
VR = 85V,
––– 54 81
TJ = 125°C
––– 110 160 nC TJ = 25°C
eIF = 26A
di/dt = 100A/μs
––– 140 210
TJ = 125°C
––– 2.5 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
S
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by TJmax, starting TJ = 25°C, L = 0.91mH
RG = 25Ω, IAS = 26A, VGS =10V. Part not recommended for use
above this value.
ƒ Pulse width 400μs; duty cycle 2%.
„ Rθ is measured at TJ approximately 90°C
… Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
† Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
2 www.irf.com

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