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IRFI3205PBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRFI3205PBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRFI3205PBF?> डेटा पत्रक पीडीएफ

IRFI3205PBF pdf
  IRFI3205PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
LS
Ciss
Coss
Crss
C
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
55 ––– ––– V VGS = 0V, ID = 250µA
––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.008  VGS = 10V, ID = 34A
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
42 ––– ––– S VDS = 25V, ID = 59A
––– –––
––– –––
25
250
µA
VDS = 55V, VGS = 0V
VDS = 44V,VGS = 0V,TJ =150°C
–––
–––
––– 100
––– -100
nA
VGS = 20V
VGS = -20V
––– ––– 170
ID = 59A
––– ––– 32 nC   VDS = 44V
––– ––– 74
––– 14 –––
––– 100 –––
––– 43 –––
––– 70 –––
––– 4.5 –––
––– 7.5 –––
VGS = 10V , See Fig. 6 and 13
VDD = 28V
ns
ID = 59A
RG= 2.5
RD= 0.39See Fig. 10
Between lead,
nH
 
6mm
from
(0.25in.)
package
and center of die contact
––– 4000 –––
––– 1300 –––
––– 480 –––
VGS = 0V
pF
 
VDS
ƒ=
= 25V
1.0MHz,
See
Fig.
5
––– 12 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
Min.
–––
–––
Typ.
–––
–––
Max. Units
Conditions
64
390
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
VSD Diode Forward Voltage
––– ––– 1.3 V TJ = 25°C,IS = 34A,VGS = 0V 
trr Reverse Recovery Time
––– 110 170 ns TJ = 25°C ,IF = 59A
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– 450 680 nC di/dt = 100A/µs 
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Starting TJ = 25°C, L = 190H, RG = 25, IAS = 59A (See fig. 12)
ISD 59A, di/dt 290A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 300µs; duty cycle 2%.
t=60s, ƒ=60Hz
Uses IRF3205 data and test conditions.
2 2017-04-27

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