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IRFHM9391TRPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRFHM9391TRPBF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
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IRFHM9391TRPBF pdf
  IRFHM9391TRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
VGS(th)
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
IDSS Drain-to-Source Leakage Current  
IGSS
gfs
Qg
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy
Min.
-30
–––
–––
–––
–––
-1.3
–––
–––
–––
–––
–––
16
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
 
Typ.
–––
0.02
10
11.7
18
-1.8
-5.1
–––
–––
–––
–––
–––
16
32
3.0
1.4
8.0
19.6
9.4
9.0
16
11
27
72
60
1543
310
208
 
Max.
–––
–––
–––
14.6
22.5
-2.4
–––
-1.0
-150
-10
10
–––
–––
48
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
  
Units
Conditions
V VGS = 0V, ID = -250µA
V/°C Reference to 25°C, ID = -1mA
mVGS = -20V, ID = -11A
  VGS = -10V, ID = -11A
  VGS = -4.5V, ID = -11A
V
mV/°C
VDS = VGS, ID = -25µA
µA
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V,TJ = 125°C
µA VGS = -25V
VGS = 25V
S VDS = -10V, ID = -9.0A
nC VGS = -4.5V, VDS =-15V, ID = -9.0A
 
nC
 
 
 
nC
 
ns
 
 
pF
 
VDS = -15V
VGS = -10V
ID = -9.0A
VDS = -16V, VGS = 0V
VDD = -15V, VGS = -4.5V
ID = -1.0A
RG=6.8
VGS = 0V
VDS = -25V
ƒ = 1.0KHz
Typ.
 
Max.
 
Units
––– 75 mJ
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Thermal Resistance
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Min.
–––
–––
–––
–––
–––
 
Typ.
–––
–––
–––
64
25
  
 
Max. Units
Conditions
-2.8 MOSFET symbol
D
-90
A 
showing the
integral reverse
G
p-n junction diode.
S
-1.2 V TJ = 25°C, IS = -2.8A, VGS = 0V 
96 ns TJ = 25°C, IF = -2.8A, VDD = -24V
38 nC di/dt = 100A/µs
 
Typ.
–––
–––
–––
–––
 
Max.
3.8
42
47
32
 
Units
°C/W
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July 01, 2014

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