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DMP2540UCB9 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMP2540UCB9
समारोह P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMP2540UCB9 pdf
Maximum Ratings (@TA = +25°C unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -4.5V
Steady
State
Continuous Drain Current (Note 6) VGS = -4.5V
Steady
State
Pulsed Drain Current (Pulse duration 10μs, duty cycle ≤1%)
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Continuous Source Pin Current (Note 6)
Pulsed Source Pin Current (Pulse duration 10μs, duty cycle ≤1%)
Continuous Gate Clamp Current (Note 5)
Pulsed Gate Clamp Current (Pulse duration 10μs, duty cycle ≤1%)
Symbol
VDSS
VGSS
ID
ID
IDM
IS
ISM
IG
IGM
DMP2540UCB9
Value
-25
-6
-4.0
-3.0
-5.2
-4.0
-30
-2.0
-15
-0.6
-8
Units
V
V
A
A
A
A
A
A
A
Thermal Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
PD
PD
RJA
RJA
TJ, TSTG
Value
1.0
1.8
126.8
69
-55 to +150
Units
W
W
°C/W
°C/W
°C
Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @TC = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
Reverse Recovery Charge
Reverse Recovery Time
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Series Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
|Yfs|
VSD
Qrr
trr
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Min
-25
-
-
-0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-0.6
33
42
52
12
-0.7
100
130
342
174
70
28
4.8
0.5
1.0
11
12
56
42
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Max
-
-1
-100
-1.1
40
50
60
-
-1
-
-
450
225
90
35
6.0
-
-
-
-
-
-
Unit
Test Condition
V VGS = 0V, ID = -250μA
μA VDS = -20V, VGS = 0V
nA VGS = -6V, VDS = 0V
V VDS = VGS, ID = -250μA
VGS = -4.5V, ID = - 2A
mΩ VGS = -2.5V, ID = -2A
VGS = -1.8V, ID = -2A
S VDS = -10V, ID = -2A
V VGS = 0V, IS = -2A
nC Vdd = 9.5V, IF = 2A, di/dt =
ns 200A/μs
pF
pF
VDS = -10V, VGS = 0V,
f = 1.0MHz
pF
Ω VDS = 0V, VGS = 0V, f = 1.0MHz
nC
nC VGS = -4.5V, VDS = -10V,
nC ID = -2A
ns
ns VDD = -10V, VGS = -4.5V,
ns IDS = -2A, RG = 2Ω,
ns
DMP2540UCB9
Document number: DS35611 Rev. 5 - 2
2 of 6
www.diodes.com
May 2015
© Diodes Incorporated

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