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DMP22D4UFA डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMP22D4UFA
समारोह P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMP22D4UFA pdf
DMP22D4UFA
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 5) VGS = -4.5V
Steady
State
t<10s
Continuous Drain Current (Note 5) VGS = -1.8V
Steady
State
t<10s
Pulsed Drain Current (Note 6)
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
Symbol
VDSS
VGSS
ID
ID
ID
ID
IDM
Value
-20
±8
-330
-260
-400
-310
-250
-200
-310
-240
-800
Units
V
V
mA
mA
mA
mA
mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Steady state
Steady state
t<10s
Symbol
PD
RθJA
TJ, TSTG
Value
400
310
220
-55 to +150
Units
mW
°C/W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
@Tc = 25°C
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
|Yfs|
VSD
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
Min
-20
-
-
-
-0.4
-
-
-
-
-
100
-
-
-
-
-
-
-
-
-
-
-
-
Typ Max
--
- 100
- 50
- ±100
- -1.0
1.2 1.9
1.5 2.4
2.1 3.4
2.5 5
4.0 -
450 -
-0.6 -1.0
28.7 -
4.2 -
2.9 -
0.4 -
0.4 -
0.08 -
0.06 -
5.8 -
5.7 -
31.1 -
16.4 -
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Unit Test Condition
V VGS = 0V, ID = -250μA
nA VDS = -16V, VGS = 0V
VDS = -5V, VGS = 0V
nA VGS = ±5V, VDS = 0V
V VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -100mA
VGS = -2.5V, ID = -50mA
Ω VGS = -1.8V, ID = -20mA
VGS = -1.5V, ID = -10mA
VGS = -1.2V, ID = -1mA
mS VDS = -5V, ID = -125mA
V VGS = 0V, IS = -10mA
pF
pF
VDS = -15V, VGS = 0V,
f = 1.0MHz
pF
Ω VDS = 0V, VGS = 0V, f = 1.0MHz
nC
nC VGS = -4.5V, VDS =- 10V,
nC ID = -250mA
ns
ns VDD = -15V, VGS = -4.5V,
ns RG = 2, ID = -200mA
ns
DMP22D4UFA
Document number: DS35766 Rev. 2 - 2
2 of 6
www.diodes.com
May 2012
© Diodes Incorporated

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