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DMP21D5UFD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL ENHANCEMENT MODE MOSFET - Diodes

भाग संख्या DMP21D5UFD
समारोह P-CHANNEL ENHANCEMENT MODE MOSFET
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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DMP21D5UFD pdf
DMP21D5UFD
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = -4.5V
Continuous Drain Current (Note 6) VGS = -1.8V
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode continuous Current
Steady
State
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VGSS
ID
ID
IDM
IS
Value
-20
±8
-600
-500
-400
-300
-2
-800
Units
V
V
mA
mA
A
mA
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Steady state
Steady state
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
0.4
280
0.8
140
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Symbol Min Typ Max
BVDSS
IDSS
-20
——
-80
-100
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge VGS = -4.5V
Total Gate Charge VGS = -8V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
IGSS
VGS(th)
RDS (ON)
|Yfs|
VSD
Ciss
Coss
Crss
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-0.5
0.7
0.9
1.2
1.5
5
0.7
-0.75
46.1
7.2
4.9
0.5
0.8
0.1
0.1
8.5
4.3
20.2
19.2
±10.0
-1.0
1.0
1.5
2.0
3.0
-1.2
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Unit Test Condition
V VGS = 0V, ID = -1mA
nA VDS = -4.5V, VGS = 0V
VDS = -20V, VGS = 0V
µA VGS = ±8V, VDS = 0V
V VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -100mA
VGS = -2.5V, ID = -80mA
Ω VGS = -1.8V, ID = -40mA
VGS = -1.5V, ID = -30mA
VGS = -1.2V, ID = -1mA
S VDS = -3V, ID = -100mA
V VGS = 0V, IS = -330mA,
pF
VDS = -10V, VGS = 0V,
f = 1.0MHz
nC VDS = -10V, ID = -250mA
VDD = -3V, VGS = -2.5V,
ns RL = 300, RG = 25,
ID = -100mA
DMP21D5UFD
Document number: DS35931 Rev. 4 - 2
2 of 6
www.diodes.com
August 2012
© Diodes Incorporated

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