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D5NM50 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - STD5NM50 - STMicroelectronics

भाग संख्या D5NM50
समारोह STD5NM50
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
1 Page
		
<?=D5NM50?> डेटा पत्रक पीडीएफ

D5NM50 pdf
STD5NM50/STD5NM50-1
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
Rthj-amb Thermal Resistance Junction-ambient
Max
Tl Maximum Lead Temperature For Soldering Purpose
1.25
100
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
2.5
300
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
500
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 2.5A
Min.
3
Typ.
4
0.7
Max.
5
0.8
Unit
V
DYNAMIC
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS = 25Vx, ID = 2.5A
3.5 S
Ciss Input Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
415
pF
Coss
Output Capacitance
88 pF
Crss Reverse Transfer
Capacitance
12 pF
Coss eq. (2) Equivalent Output
Capacitance
VGS = 0V, VDS = 0V to 400V
50 pF
RG Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
3
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
2/10

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D5NM50STD5NM50STMicroelectronics
STMicroelectronics


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