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D58V0M4U8MR डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 58V UNIDIRECTIONAL TVS DIODE ARRAY - Diodes

भाग संख्या D58V0M4U8MR
समारोह 58V UNIDIRECTIONAL TVS DIODE ARRAY
मैन्युफैक्चरर्स Diodes 
लोगो Diodes लोगो 
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D58V0M4U8MR pdf
Maximum Ratings (@TA = +25°C, unless otherwise specified.), Per Element
Characteristic
Peak Pulse Power Dissipation
Peak Pulse Current
ESD Protection – Contact Discharge
ESD Protection – Air Discharge
Symbol
PPP
IPP
VESD_Contact
VESD_Air
Value
2700
24
±30
±30
D58V0M4U8MR
Unit Conditions
W 8/20µs, Per Figure 1
A 8/20µs, Per Figure 1
kV IEC 61000-4-2 Standard
kV IEC 61000-4-2 Standard
Thermal Characteristics
Characteristic
Package Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
1.0
125
-65 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Reverse Standoff Voltage
Channel Leakage Current (Note 6)
Breakdown Voltage
Clamping Voltage
Channel Input Capacitance
Symbol
Min
Typ
Max Unit
Test Conditions
VRWM
— 58
V
IRM
— 0.2 μA VRWM = 58V
VBR 64.4 — 71.2 V IR = 1mA
VCL
— 100
V IPP = 24A, tp = 8/20μS
CT — 55 — pF VR = 50V, f = 1MHz
Notes:
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
100
50
Peak Value Ipp
Half Value Ipp/2
8x20 Waveform
0 as defined by R.E.A.
0 20 40
t, TIME (s)
Figure 1 Pulse Waveform
D58V0M4U8MR
Document number: DS36183 Rev. 2 - 2
110
100
90
80
70
60
50
40
30
20
10
60 00 25 50 75 100 125 150 175
TJ (°C)
Figure 2 Peak Power Dissipation vs.
Initial Junction Temperature
2 of 5
www.diodes.com
April 2014
© Diodes Incorporated

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D58V0M4U8MR58V UNIDIRECTIONAL TVS DIODE ARRAYDiodes
Diodes


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