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IRGS6B60KPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Insulated Gate Bipolar Transistor - International Rectifier

भाग संख्या IRGS6B60KPBF
समारोह Insulated Gate Bipolar Transistor
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
1 Page
		
<?=IRGS6B60KPBF?> डेटा पत्रक पीडीएफ

IRGS6B60KPBF pdf
IRGB/S/SL6B60KPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 500µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
––– 0.3 ––– V/°C
1.5 1.80 2.20 V
––– 2.20 2.50
VGE = 0V, IC = 1.0mA, (25°C-150°C)
IC = 5.0A, VGE = 15V
5, 6,7
IC = 5.0A,VGE = 15V,
TJ = 150°C 8,9,10
VGE(th)
Gate Threshold Voltage
3.5 4.5 5.5 V VCE = VGE, IC = 250µA
8,9,10
VGE(th)/TJ Temperature Coeff. of Threshold Voltage ––– -10 ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-150°C) 11
gfe Forward Transconductance
––– 3.0 ––– S VCE = 50V, IC = 5.0A, PW=80µs
ICES
Zero Gate Voltage Collector Current
––– 1.0 150 µA VGE = 0V, VCE = 600V
––– 200 500
VGE = 0V, VCE = 600V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
Qg
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
Cies
Coes
Cres
RBSOA
SCSOA
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operting Area
Short Circuit Safe Operting Area
––– 18.2 –––
IC = 5.0A
17
––– 1.9 ––– nC VCC = 400V
CT1
––– 9.2 –––
VGE = 15V
––– 110 210 µJ IC = 5.0A, VCC = 400V
CT4
––– 135 245
VGE = 15V,RG = 100Ω, L =1.4mH
––– 245 455
Ls = 150nH
TJ = 25°C „
––– 25 34
IC = 5.0A, VCC = 400V
CT4
––– 17 26
VGE = 15V, RG = 100L =1.4mH
––– 215 230 ns Ls = 150nH, TJ = 25°C
––– 13.2 22
––– 150 260
IC = 5.0A, VCC = 400V
CT4
––– 190 300 µJ VGE = 15V,RG = 100Ω, L =1.4mH
12,14
––– 340 560
Ls = 150nH
TJ = 150°C „ WF1WF2
––– 28 37
IC = 5.0A, VCC = 400V
13, 15
––– 17 26
VGE = 15V, RG = 100L =1.4mH
CT4
––– 240 255 ns Ls = 150nH, TJ = 150°C
WF1
––– 18 27
WF2
––– 290 –––
VGE = 0V
––– 34 ––– pF VCC = 30V
16
––– 10 –––
f = 1.0MHz
FULL SQUARE
TJ = 150°C, IC = 26A, Vp =600V
4
VCC = 500V, VGE =+15V to 0V,RG = 100CT2
10
––– –––
µs
TJ = 150°C, Vp =600V, RG = 100
VCC = 360V, VGE = +15V to 0V
CT3
WF3
Note  to „ are on page 13
2
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