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IRGS4B60KD1PBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Insulated Gate Bipolar Transistor - International Rectifier

भाग संख्या IRGS4B60KD1PBF
समारोह Insulated Gate Bipolar Transistor
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRGS4B60KD1PBF pdf
IRGB/S/SL4B60KD1PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 500µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.28 — V/°C VGE = 0V, IC = 1mA (25°C-150°C)
— 2.1 2.5
IC = 4.0A, VGE = 15V, TJ = 25°C
VCE(on)
Collector-to-Emitter Voltage
— 2.5 2.8 V IC = 4.0A, VGE = 15V, TJ = 150°C
— 2.6 2.9
IC = 4.0A, VGE = 15V, TJ = 175°C
VGE(th)
Gate Threshold Voltage
3.5 4.5 5.5 V VCE = VGE, IC = 250µA
VGE(th)/TJ Threshold Voltage temp. coefficient
— -8.1 — mV/°C VCE = VGE, IC = 1mA (25°C-150°C)
gfe Forward Transconductance
— 1.7 —
S VCE = 50V, IC = 4.0A, PW = 80µs
— 1.0 150
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
— 136 600 µA VGE = 0V, VCE = 600V, TJ = 150°C
— 722 2400
VGE = 0V, VCE = 600V, TJ = 175°C
VFM Diode Forward Voltage Drop
— 1.4 2.0 V IF = 4.0A
— 1.3 1.8
IF = 4.0A, TJ = 150°C
— 1.2 1.7
IF = 4.0A, TJ = 175°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge (turn-on)
— 12 —
IC = 4.0A
Qge Gate-to-Emitter Charge (turn-on)
— 1.7 — nC VCC = 400V
Qgc
Gate-to-Collector Charge (turn-on)
— 6.5 —
VGE = 15V
Eon Turn-On Switching Loss
— 73 80
IC = 4.0A, VCC = 400V
Eoff Turn-Off Switching Loss
Etot Total Switching Loss
— 47 53 µJ VGE = 15V, RG = 100, L = 2.5mH
— 120 130
eTJ = 25°C
td(on)
Turn-On delay time
— 22 28
IC = 4.0A, VCC = 400V
tr Rise time
— 18 23 ns VGE = 15V, RG = 100, L = 2.5mH
td(off)
Turn-Off delay time
— 100 110
TJ = 25°C
tf Fall time
— 66 80
Eon Turn-On Switching Loss
— 130 150
IC = 4.0A, VCC = 400V
Eoff Turn-Off Switching Loss
Etot Total Switching Loss
— 83 140 µJ VGE = 15V, RG = 100, L = 2.5mH
— 220 280
eTJ = 150°C
td(on)
Turn-On delay time
— 22 27
IC = 4.0A, VCC = 400V
tr Rise time
— 18 22 ns VGE = 15V, RG = 100, L = 2.5mH
td(off)
Turn-Off delay time
— 120 130
TJ = 150°C
tf Fall time
— 79 89
Cies Input Capacitance
— 190 —
VGE = 0V
Coes Output Capacitance
— 25 — pF VCC = 30V
Cres Reverse Transfer Capacitance
— 6.2 —
f = 1.0MHz
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
TJ = 150°C, IC = 22A, Vp = 600V
VCC=500V,VGE = +15V to 0V,RG = 100
SCSOA
Short Circuit Safe Operating Area
10 — — µs TJ = 150°C, Vp = 600V, RG = 100
VCC=360V,VGE = +15V to 0V
Erec Reverse Recovery Energy of the Diode — 81 100 µJ TJ = 150°C
Ref.Fig.
5,6,7
9,10,11
9,10,11
12
8
Ref.Fig.
23
CT1
CT4
CT4
CT4
13,15
WF1,WF2
14,16
CT4
WF1
WF2
22
4
CT2
CT3
WF4
17,18,19
trr Diode Reverse Recovery Time
— 93 — ns VCC = 400V, IF = 4.0A, L = 2.5mH
20,21
Irr Peak Reverse Recovery Current — 6.3 7.9 A VGE = 15V, RG = 100
CT4,WF3
Note  to ƒ are on page 16
2
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