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IRGS4715DPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Insulated Gate Bipolar Transistor - International Rectifier

भाग संख्या IRGS4715DPBF
समारोह Insulated Gate Bipolar Transistor
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRGS4715DPBF pdf
  IRGB4715DPBF/IRGS4715DPBF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 650
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage —
0.8
VCE(on)
Collector-to-Emitter Saturation Voltage
— 1.7 2.0
— 2.1 —
VGE(th)
Gate Threshold Voltage
5.5 — 7.4
VGE(th)/TJ Threshold Voltage Temperature Coeff.
— -19 —
gfe Forward Transconductance
— 5.7 —
ICES
Collector-to-Emitter Leakage Current
— 1.0 25
— 1.0 —
IGES Gate-to-Emitter Leakage Current
VF   Diode Forward Voltage Drop  
— — ±100
— 1.8 2.8
— 1.3 —
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
V VGE = 0V, IC = 100µA
V/°C VGE = 0V, IC = 1mA (25°C-175°C)
V IC = 8A, VGE = 15V, TJ = 25°C
IC = 8A, VGE = 15V, TJ = 175°C
V VCE = VGE, IC = 250µA
mV/°C VCE = VGE, IC = 250µA (25°C-175°C)
S VCE = 50V, IC = 8A, PW = 20µs
µA VGE = 0V, VCE = 650V
mA VGE = 0V, VCE = 650V, TJ = 175°C
nA VGE = ±30V
V IF = 8A
IF = 8A, TJ = 175°C
Parameter
Min. Typ. MaxUnits
Conditions
Qg
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Cies
Coes
Cres
RBSOA
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
SCSOA  
Erec
trr
Irr
Short Circuit Safe Operating Area  
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
— 20 30
—6
9
— 8 12
— 200 310
— 90 180
— 290 490
— 30 50
— 20 30
— 100 120
— 20 30
— 340 —
— 170 —
— 510 —
— 30 —
— 20 —
— 120 —
— 70 —
— 540 —
— 50 —
— 15 —
FULL SQUARE
5.5   
— 130
— 86
—8
 
IC = 8A
nC VGE = 15V
VCC = 400V
µJ   IC = 8A, VCC = 400V, VGE=15V
RG = 50, TJ = 25°C
Energy losses include tail & diode
ns  reverse recovery
µJ 
IC = 8A, VCC = 400V, VGE=15V
RG = 50, TJ = 175°C
Energy losses include tail & diode
ns reverse recovery  
VGE = 0V
pF VCC = 30V
f = 1.0Mhz
TJ = 175°C, IC = 32A
VCC = 520V, Vp 650V
VGE = +20V to 0V
µs
 
TJ = 150°C,VCC = 400V, Vp 650V
VGE = +15V to 0V
µJ TJ = 175°C
ns VCC = 400V, IF = 8A
A VGE = 15V, Rg = 50
Notes:
VCC = 80% (VCES), VGE = 20V.
Ris measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
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November 12, 2014

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