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IRGS4630DPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Insulated Gate Bipolar Transistor - International Rectifier

भाग संख्या IRGS4630DPBF
समारोह Insulated Gate Bipolar Transistor
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRGS4630DPBF?> डेटा पत्रक पीडीएफ

IRGS4630DPBF pdf
IRGS/B/P4630D/EPbF
Thermal Resistance
Parameter
RθJC (IGBT) Thermal Resistance Junction-to-Case (D2Pak, TO-220)
Thermal Resistance Junction-to-Case (TO-247)
RθJC (Diode) Thermal Resistance Junction-to-Case (D2Pak, TO-220)
Thermal Resistance Junction-to-Case (TO-247)
RθCS
RθJA
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (PCB Mount - D2Pak)
Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-220)
Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-247)
Min.
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
0.5
–––
–––
–––
Max.
0.73
0.78
2.0
2.1
–––
40
62
40
Units
°C/W
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
V(BR)CES
Collector-to-Emitter Breakdown Voltage
ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage
600
0.40
1.65
VCE(on)
Collector-to-Emitter Saturation Voltage
— 2.05
— 2.15
VGE(th)
ΔVGE(th)/ΔTJ
gfe
Gate Threshold Voltage
Threshold Voltage Temp. Coefficient
Forward Transconductance
4.0 —
— -18
— 12
ICES
Collector-to-Emitter Leakage Current
— 2.0
— 550
IGES Gate-to-Emitter Leakage Current
VFM Diode Forward Voltage Drop
——
— 2.3
— 1.6
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
Qg
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Cies
Coes
Cres
Total Gate Charge
Gate-to-Emitter Charge
Gate-to-Collector Charge
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
— 35
— 10
— 15
— 95
— 350
— 445
— 40
— 25
— 105
— 25
— 285
— 570
— 855
— 40
— 25
— 120
— 40
— 1040
— 87
— 32
Max.
1.95
6.5
25
±100
3.3
Max
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
SCSOA
Erec
trr
Irr
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
5.0 — —
— 260 —
— 100 —
— 23 —
Units
Conditions
V VGE = 0V, IC = 100µA
V/°C VGE = 0V, IC = 1mA (25°C-175°C)
IC = 18A, VGE = 15V, TJ = 25°C
V IC = 18A, VGE = 15V, TJ = 150°C
IC = 18A, VGE = 15V, TJ = 175°C
V VCE = VGE, IC = 500µA
mV/°C VCE = VGE, IC = 1.0mA (25°C-175°C)
S VCE = 50V, IC = 18A, PW = 80µs
µA VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 175°C
nA VGE = ±20V
V IF = 18A
IF = 18A, TJ = 175°C
Units
Conditions
IC = 18A
nC VGE = 15V
VCC = 400V
µJ IC = 18A, VCC = 400V, VGE=15V
RG = 22Ω, L = 200µH, LS = 150nH,
TJ = 25°C
ns Energy losses include tail & diode
reverse recovery
µJ IC = 18A, VCC = 400V, VGE=15V
RG = 22Ω, L = 200µH, LS = 150nH,
TJ = 175°C
ns Energy losses include tail & diode
reverse recovery
VGE = 0V
pF VCC = 30V
f = 1.0MHz
TJ = 175°C, IC = 72A
VCC = 480V, Vp 600V
RG = 22, VGE = +20V to 0V
µs
VCC = 400V, Vp 600V
RG = 22, VGE = +15V to 0V
µJ TJ = 175°C
ns VCC = 400V, IF = 18A, VGE = 15V,
A Rg = 22Ω, L = 200µH, LS = 150nH
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November 18, 2014

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