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IRGS4607DPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Insulated Gate Bipolar Transistor - International Rectifier

भाग संख्या IRGS4607DPBF
समारोह Insulated Gate Bipolar Transistor
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
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IRGS4607DPBF pdf
  IRGR/S/B4607DPbF
Thermal Resistance
Parameter
RJC (IGBT)
RJC (Diode)
RCS
Thermal Resistance, Junction-to-Case (IGBT)
Thermal Resistance, Junction-to-Case (Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface) (TO-220)
Thermal Resistance, Junction-to-Ambient (PCB Mount) (D-Pak)
RJA Thermal Resistance, Junction-to-Ambient (PCB Mount) (D2-Pak)
Thermal Resistance, Junction-to-Ambient (Socket Mount) (TO-220)
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
–––
–––
Max.
2.6
8.3
–––
50
40
62
Units
 
°C/W
 
 
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
V(BR)CES
Collector-to-Emitter Breakdown Voltage
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
600
0.52
1.75
VCE(on)
Collector-to-Emitter Saturation Voltage
— 2.15
— 2.20
VGE(th)
Gate Threshold Voltage
4.0 —
VGE(th)/TJ
gfe
ICES
Threshold Voltage Temperature Coeff.
Forward Transconductance
Collector-to-Emitter Leakage Current
— -19
— 2.2
— 0.50
— 100
IGES Gate-to-Emitter Leakage Current
VF   Diode Forward Voltage Drop  
——
— 1.7
— 1.5
Max. Units
Conditions
— V VGE = 0V, IC = 100µA
— V/°C VGE = 0V, IC = 100µA (25°C-175°C)
2.05
6.5
 
V
V
IC = 4.0A, VGE = 15V, TJ = 25°C
IC = 4.0A, VGE = 15V, TJ = 150°C
IC = 4.0A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 100µA
25
±100
2.3
mV/°C VCE = VGE, IC =100µA (25°C-175°C)
S VCE = 50V, IC = 4.0A, PW = 20µs
µA VGE = 0V, VCE = 600V
  VGE = 0V, VCE = 600V, TJ = 175°C
nA VGE = ±20V
V IF = 4.0A
IF = 4.0A, TJ = 175°C
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November 14, 2014

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