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IRGS4045DPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Insulated Gate Bipolar Transistor - International Rectifier

भाग संख्या IRGS4045DPBF
समारोह Insulated Gate Bipolar Transistor
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRGS4045DPBF pdf
IRGS4045DPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
V(BR)CES
V(BR)CES/TJ
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
600 —
— 0.36
— 1.7
VCE(on)
Collector-to-Emitter Saturation Voltage
— 2.07
— 2.14
VGE(th)
VGE(th)/TJ
gfe
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
4.0 —
— -13
— 5.8
ICES
Collector-to-Emitter Leakage Current
——
——
VFM Diode Forward Voltage Drop
— 1.60
— 1.30
IGES Gate-to-Emitter Leakage Current
——
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
Qg Total Gate Charge (turn-on)
Qge Gate-to-Emitter Charge (turn-on)
Qgc Gate-to-Collector Charge (turn-on)
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
Etotal Total Switching Loss
td(on) Turn-On delay time
tr Rise time
td(off) Turn-Off delay time
tf Fall time
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
Etotal Total Switching Loss
td(on) Turn-On delay time
tr Rise time
td(off) Turn-Off delay time
tf Fall time
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
— 13
— 3.1
— 6.4
— 56
— 122
— 178
— 27
— 11
— 75
— 17
— 140
— 189
— 329
— 26
— 12
— 95
— 32
— 350
— 29
— 10
Max.
2.0
6.5
25
250
2.30
±100
hMax.
19.5
4.65
9.6
86
143
229
35
15
93
22
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
SCSOA
Erec
trr
Irr
Short Circuit Safe Operating Area
Reverse recovery energy of the diode
Diode Reverse recovery time
Peak Reverse Recovery Current
5 ——
— 178 —
— 74 —
— 12 —
Units
V
V/°C
V
V
mV/°C
S
μA
V
nA
Units
nC
μJ
ns
μJ
ns
pF
μs
μJ
ns
A
Conditions
fVGE = 0V, Ic =100 μA
fVGE = 0V, Ic = 250μA ( 25 -175 oC )
IC = 6.0A, VGE = 15V, TJ = 25°C
IC = 6.0A, VGE = 15V, TJ = 150°C
IC = 6.0A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 150μA
VCE = VGE, IC = 250μA ( 25 -175 oC )
VCE = 25V, IC = 6.0A, PW =80s
VGE = 0V,VCE = 600V
VGE = 0V, VCE = 600V, TJ =175°C
IF = 6.0A
IF = 6.0A, TJ = 175°C
VGE = ± 20 V
Conditions
IC = 6.0A
VCC = 400V
VGE = 15V
IC = 6.0A, VCC = 400V, VGE = 15V
RG = 47, L=1mH, LS= 150nH, TJ = 25°C
E nergy los s es include tail and diode revers e recovery
IC = 6.0A, VCC = 400V
RG = 47, L=1mH, LS= 150nH
TJ = 25°C
IC = 6.0A, VCC = 400V, VGE = 15V
RG = 47, L=1mH, LS= 150nH, TJ = 175°C
E nergy los s es include tail and diode revers e recovery
IC = 6.0A, VCC = 400V
RG = 47, L=1mH, LS= 150nH
TJ = 175°C
VGE = 0V
VCC = 30V
f = 1Mhz
TJ = 175°C, IC = 24A
VCC = 500V, Vp =600V
RG = 100, VGE = +20V to 0V
VCC = 400V, Vp =600V
RG = 100, VGE = +15V to 0V
TJ = 175oC
VCC = 400V, IF = 6.0A
VGE = 15V, Rg = 47, L=1mH, LS=150nH
Notes:
 VCC = 80% (VCES), VGE = 15V, L = 1.0mH, RG = 47
‚ Pulse width limited by max. junction temperature.
ƒ Ris measured at TJ approximately 90°C.
„ Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
… When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.
† Maximum limits are based on statistical sample size characterization.
2 www.irf.com © 2012 International Rectifier
October 10, 2012

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