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IRGSL30B60KPbF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Insulated Gate Bipolar Transistor - International Rectifier

भाग संख्या IRGSL30B60KPbF
समारोह Insulated Gate Bipolar Transistor
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRGSL30B60KPbF pdf
IRGB/S/SL30B60KPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 500µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.40 — V/°C VGE = 0V, IC = 1mA (25°C-150°C)
— 1.95 2.35
IC = 30A, VGE = 15V, TJ = 25°C
VCE(on)
Collector-to-Emitter Voltage
— 2.40 2.75 V IC = 30A, VGE = 15V, TJ = 150°C
— 2.6 2.95
IC = 30A, VGE = 15V, TJ = 175°C
VGE(th)
Gate Threshold Voltage
3.5 4.5 5.5 V VCE = VGE, IC = 250µA
VGE(th)/TJ Threshold Voltage temp. coefficient
— -10 — mV/°C VCE = VGE, IC = 1.0mA (25°C-150°C)
gfe Forward Transconductance
— 18 — S VCE = 50V, IC = 50A, PW = 80µs
— 5.0 250
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
— 1000 2000 µA VGE = 0V, VCE = 600V, TJ = 150°C
— 1830 3000
VGE = 0V, VCE = 600V, TJ = 175°C
IGES Gate-to-Emitter Leakage Current
— — ±100 nA VGE = ±20V, VCE = 0V
Ref.Fig.
5,6,7
8,9,10
8,9,10
11
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge (turn-on)
— 102 153
IC = 30A
Qge Gate-to-Emitter Charge (turn-on) — 14 21 nC VCC = 400V
Qgc
Gate-to-Collector Charge (turn-on)
— 44 66
VGE = 15V
Eon Turn-On Switching Loss
— 350 620
IC = 30A, VCC = 400V
Eoff Turn-Off Switching Loss
Etot Total Switching Loss
f— 825 955 µJ VGE = 15V, RG = 10, L = 200µH
— 1175 1575
TJ = 25°C
td(on)
Turn-On delay time
— 46 60
IC = 30A, VCC = 400V
tr Rise time
— 28 39 ns VGE = 15V, RG = 10, L = 200µH
td(off)
Turn-Off delay time
— 185 200
TJ = 25°C
tf Fall time
— 31 40
Eon Turn-On Switching Loss
— 635 1085
IC = 30A, VCC = 400V
Eoff Turn-Off Switching Loss
Etot Total Switching Loss
f— 1150 1350 µJ VGE = 15V, RG = 10, L = 200µH
— 1785 2435
TJ = 150°C
td(on)
Turn-On delay time
— 46 60
IC = 30A, VCC = 400V
tr Rise time
— 28 39 ns VGE = 15V, RG = 10, L = 200µH
td(off)
Turn-Off delay time
— 205 235
TJ = 150°C
tf Fall time
— 32 42
LE Internal Emitter Inductance
— 7.5 — nH Measured 5mm from package
Cies Input Capacitance
— 1750 2500
VGE = 0V
Coes Output Capacitance
— 160 255 pF VCC = 30V
Cres Reverse Transfer Capacitance
— 60 90
f = 1.0MHz
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
TJ = 150°C, IC = 120A, Vp = 600V
VCC=500V,VGE = +15V to 0V,RG =10
SCSOA
Short Circuit Safe Operating Area
10 — — µs TJ = 150°C, Vp = 600V, RG = 10
VCC=360V,VGE = +15V to 0V
ISC (Peak) Peak Short Circuit Collector Current
— 200 — A
Ref.Fig.
17
CT1
CT4
CT4
CT4
12,14
WF1,WF2
13,15
CT4
WF1
WF2
16
4
CT2
CT3
WF3
WF3
Note  to … are on page 13
2
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