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IRGPS46160DPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Insulated Gate Bipolar Transistor - International Rectifier

भाग संख्या IRGPS46160DPBF
समारोह Insulated Gate Bipolar Transistor
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
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IRGPS46160DPBF pdf
IRGPS46160DPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
V(BR)CES
ΔV(BR)CES/ΔTJ
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
600
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
ΔVGE(th)/ΔTJ
gfe
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
4.0
ICES
Collector-to-Emitter Leakage Current
VFM Diode Forward Voltage Drop
IGES Gate-to-Emitter Leakage Current
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Qg Total Gate Charge
Qge Gate-to-Emitter Charge
Qgc Gate-to-Collector Charge
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
Etotal
Total Switching Loss
td(on) Turn-On delay time
tr Rise time
td(off) Turn-Off delay time
tf Fall time
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
Etotal
Total Switching Loss
td(on) Turn-On delay time
tr Rise time
td(off) Turn-Off delay time
tf Fall time
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
Typ.
0.27
1.70
2.15
2.20
-17
77
1.0
2.3
2.4
1.9
Typ.
240
70
90
5750
3430
9180
80
70
190
40
7740
4390
12130
80
75
230
55
7750
550
225
Max.
2.05
6.5
150
3.0
±400
Max.
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
SCSOA
Short Circuit Safe Operating Area
5 ——
Erec
trr
Irr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
— 500 —
— 130 —
— 36 —
Units
V
V/°C
V
V
mV/°C
S
μA
mA
V
nA
Conditions
eVGE = 0V, IC = 100μA
VGE = 0V, IC = 4.0mA (25°C-175°C)
IC = 120A, VGE = 15V, TJ = 25°C
IC = 120A, VGE = 15V, TJ = 150°C
IC = 120A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 5.6mA
VCE = VGE, IC = 5.6mA (25°C - 175°C)
VCE = 50V, IC = 120A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 175°C
IF = 120A
IF = 120A, TJ = 175°C
VGE = ±20V
Units
nC
IC = 120A
VGE = 15V
VCC = 400V
Conditions
μJ IC = 120A, VCC = 400V, VGE = 15V
RG = 4.7Ω, L = 66μH, TJ = 25°C
Energy losses include tail
gns & diode reverse recovery
μJ IC = 120A, VCC = 400V, VGE=15V
RG = 4.7Ω, L = 66μH, TJ = 175°C
Energy losses include tail
gns & diode reverse recovery
pF VGE = 0V
VCC = 30V
f = 1.0Mhz
TJ = 175°C, IC = 480A
VCC = 480V, Vp 600V
Rg = 4.7 Ω, VGE = +20V to 0V
μs VCC = 400V, Vp 600V
Rg = 4.7 Ω, VGE = +15V to 0V
μJ TJ = 175°C
ns VCC = 400V, IF = 120A
A VGE = 15V, Rg = 4.7 Ω, L = 100μH
Notes:
 VCC = 80% (VCES), VGE = 20V, L = 66μH, RG = 4.7Ω, tested in production ILM 400A.
‚ Pulse width limited by max. junction temperature.
ƒ Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
„ Rθ is measured at TJ of approximately 90°C.
… Values influenced by parasitic L and C in measurement.
† Calculated continuous current based on maximum allowable junction temperature. Package IGBT current limit is 195A. Package diode current
limit is 120A. Note that current limitations arising from heating of the device leads may occur.
2 www.irf.com © 2014 International Rectifier
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November 14, 2014

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