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IRGP6660DPBF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Insulated Gate Bipolar Transistor - International Rectifier

भाग संख्या IRGP6660DPBF
समारोह Insulated Gate Bipolar Transistor
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRGP6660DPBF pdf
IRGP6660DPbF/IRGP6660D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
V(BR)CES
Collector-to-Emitter Breakdown Voltage
ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
600
0.65
1.65
2.05
2.10
VGE(th)
ΔVGE(th)/ΔTJ
gfe
ICES
IGES
VFM
Gate Threshold Voltage
Threshold Voltage Temperature Coeff.
Forward Transconductance
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop
4.0 —
— -17
— 33
— 1.0
— 630
——
— 1.8
— 1.3
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Max.
1.95
6.5
75
±100
2.8
Units
Conditions
V VGE = 0V, IC = 150µA
V/°C VGE = 0V, IC = 2mA (25°C-175°C)
IC = 48A, VGE = 15V, TJ = 25°C
V IC = 48A, VGE = 15V, TJ = 150°C
IC = 48A, VGE = 15V, TJ = 175°C
V VCE = VGE, IC = 1.4mA
mV/°C VCE = VGE, IC = 1.4mA (25°C-175°C)
S VCE = 50V, IC = 48A, PW = 20µs
µA VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 175°C
nA VGE = ±20V
V IF = 8.0A
IF = 8.0A, TJ = 175°C
Qg
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Cies
Coes
Cres
RBSOA
Parameter
Total Gate Charge
Gate-to-Emitter Charge
Gate-to-Collector Charge
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Min.
Typ.
95
28
35
0.6
1.3
1.9
60
50
155
30
0.78
1.6
2.38
45
55
160
60
2970
175
85
Max
FULL SQUARE
SCSOA
Short Circuit Safe Operating Area
5
Erec
Reverse Recovery Energy of the Diode
trr Diode Reverse Recovery Time
Irr Peak Reverse Recovery Current
Notes:
VCC = 80% (VCES), VGE = 20V, L = 210µH, RG = 10Ω.
Rθ is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
fsw =40KHz, refer to figure 26.
——
135 —
70 —
22 —
Units
Conditions
IC = 48A
nC VGE = 15V
VCC = 400V
mJ IC = 48A, VCC = 400V, VGE=15V
RG = 10Ω, L = 210µH, TJ = 25°C
Energy losses include tail & diode
ns reverse recovery
mJ IC = 48A, VCC = 400V, VGE=15V
RG = 10Ω, L = 210µH, TJ = 175°C
Energy losses include tail & diode
ns reverse recovery
VGE = 0V
pF VCC = 30V
f = 1.0MHz
TJ = 175°C, IC = 192A
VCC = 480V, Vp 600V
VGE = +20V to 0V
µs
TJ = 150°C,VCC = 400V, Vp 600V
VGE = +15V to 0V
µJ TJ = 175°C
ns VCC = 400V, IF = 8.0A
A VGE = 15V, Rg = 10Ω
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November 14, 2014

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